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Electron diffusion length in solution‐grown GaAs : Ge

 

作者: K.L. Ashley,   D.L. Carr,   Roberto Romano‐Moran,  

 

期刊: Applied Physics Letters  （AIP Available online 1973）
卷期: Volume 22, issue 1  

页码: 23-25

 

ISSN:0003-6951

 

年代: 1973

 

DOI:10.1063/1.1654458

 

出版商: AIP

 

数据来源: AIP

 

摘要:

The optical microprobe is used to measure electron diffusion lengths in solution‐grownp‐type layers of Ge‐doped GaAs. They are found to be ∼ 20 &mgr;, which gives an electron lifetime of ∼ 5×10−8sec.

 

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