The electrical activity of neutron damage centres in silicon diodes
作者:
D.V. Morgan,
P. Ashburn,
期刊:
Radiation Effects
(Taylor Available online 1974)
卷期:
Volume 22,
issue 1
页码: 35-38
ISSN:0033-7579
年代: 1974
DOI:10.1080/00337577408232142
出版商: Taylor & Francis Group
数据来源: Taylor
摘要:
In this paper, a study is made of radiation damage in silicon p n diodes produced by low dose neutron irradiation, and a comparison is made with the results of earlier work on carbon irradiated diodes. Particular emphasis is placed on the effects of damage on theI/Vcharacteristics of the diodes. The physical properties of the damage are studied by means of thermally stimulated current measurements, and further information is obtained from the temperature dependence of the reverse leakage.
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