Organic conductors as electron beam resist materials
作者:
Y. Tomkiewicz,
E. M. Engler,
J. D. Kuptsis,
R. G. Schad,
V. V. Patel,
M. Hatzakis,
期刊:
Applied Physics Letters
(AIP Available online 1982)
卷期:
Volume 40,
issue 1
页码: 90-92
ISSN:0003-6951
年代: 1982
DOI:10.1063/1.92901
出版商: AIP
数据来源: AIP
摘要:
Conducting organic &pgr;‐donor halide complexes such as tetrathiafulvalene bromide were discovered to act as electron beam resists, which display a unique combination of useful properties. Exposure of sublimed films to an electron beam generates the neutral &pgr; donor and the halogen which is subsequently lost from the film. Depending on exposure conditions, either negative (solvent developed) or positive (in‐situdeveloped) resist images with a resolution of the order of 0.5 &mgr; can be generated. The strongly absorbing (UV,vis.) and highly conducting (∼10/&OHgr; cm) films were found to become transmitting and insulating upon electron beam irradiation.
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