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Epitaxial regrowth of evaporated amorphous silicon by a pulsed laser beam

 

作者: Pe´ter Re´ve´sz,   Gyo¨zo¨ Farkas,   Ga´bor Mezey,   Jo´zsef Gyulai,  

 

期刊: Applied Physics Letters  （AIP Available online 1978）
卷期: Volume 33, issue 5  

页码: 431-433

 

ISSN:0003-6951

 

年代: 1978

 

DOI:10.1063/1.90385

 

出版商: AIP

 

数据来源: AIP

 

摘要:

3000‐A˚‐thick epitaxial layers of ⟨100⟩ and ⟨111⟩ silicon have been grown using aQ‐switched ruby laser. The initial amorphous silicon layers were formed by e‐gun evaporation of high‐purity silicon. Using Rutherford backscattering it was established that the crystal quality of the regrown ⟨100⟩ Si is much better than the ⟨111⟩ Si, similar to thermal annealing.

 

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