The distribution of fluorine ions implanted into gallium arsenide has been determined through the use of Auger electron spectroscopy combined with thin‐layer removal by argon ion sputtering. This technique is a chemical measure of the ion distribution and thus is not affected by the electrical properties of the implanted species. The leading edge and depth of the peak fluorine concentration are in fair agreement with the calculated LSS distribution; however, the trailing edge exhibits a tail which extends much deeper than expected. This tail is assumed to be due to damage‐enhanced diffusion.