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Physical basis of scattering potential at grain boundary of polycrystalline semiconductors

 

作者: C. M. Wu,   E. S. Yang,  

 

期刊: Applied Physics Letters  （AIP Available online 1982）
卷期: Volume 40, issue 1  

页码: 49-51

 

ISSN:0003-6951

 

年代: 1982

 

DOI:10.1063/1.92914

 

出版商: AIP

 

数据来源: AIP

 

摘要:

A physical theory using a charge scattering model is proposed to interpret the experimental data of grain boundary transport in polycrystalline semiconductors. The calculated result explains the need of an attenuation factor as an added coefficient in the thermionic emission current.

 

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