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Identification of oxide precipitates in annealed silicon crystals

 

作者: K. H. Yang,   R. Anderson,   H. F. Kappert,  

 

期刊: Applied Physics Letters  （AIP Available online 1978）
卷期: Volume 33, issue 3  

页码: 225-227

 

ISSN:0003-6951

 

年代: 1978

 

DOI:10.1063/1.90323

 

出版商: AIP

 

数据来源: AIP

 

摘要:

We have investigated the electron loss spectra of precipitates formed in annealed silicon crystals. The precipitates, as well as residue of the precipitates in precipitation sites, uniquely give rise to an energy loss at 532 eV. The energy loss is due to the excitation of oxygen 1selectrons. The precipitates are therefore identified as silicon oxide.

 

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