Gettering in Si may be achieved by either phosphorus diffusion (ion pairing) or by dislocations (strain). We show here by use of backscattering spectrometry and transmission electron microscopy that, in particular, samples of both mechanisms are simultaneously operative. Au is present in a profile which mimics the phosphorus doping, and a spike of Au is superimposed on this profile in the strain field around a narrowly distributed misfit dislocation network. Both profiles are predominately (≳two‐thirds) substitutional, implying that local ion pair binding energies exceed the strain binding energy near the dislocations.