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InGaAsP/InP undercut mesa laser with planar polyimide passivation

 

作者: U. Koren,   T. R. Chen,   C. Harder,   A. Hasson,   K. L. Yu,   L. C. Chiu,   S. Margalit,   A. Yariv,  

 

期刊: Applied Physics Letters  （AIP Available online 1983）
卷期: Volume 42, issue 5  

页码: 403-405

 

ISSN:0003-6951

 

年代: 1983

 

DOI:10.1063/1.93955

 

出版商: AIP

 

数据来源: AIP

 

摘要:

An undercut mesa laser is fabricated on ann+‐InP substrate using a single step liquid phase epitaxy growth process and a planar structure is obtained by using a polyimide filling layer. The lasers operate at fundamental transverse mode due to a scattering loss mechanism. Threshold currents of 18 mA and stable single transverse mode operating at high currents are obtained.

 

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