首页   按字顺浏览 期刊浏览 卷期浏览 Raman Scattering from14N2+and H2+Bombarded Silicon Surface
Raman Scattering from14N2+and H2+Bombarded Silicon Surface

 

作者: M.S. Mathur,   V.P. Derenchuk,   J.S. C. McKee,  

 

期刊: Spectroscopy Letters  （Taylor Available online 1984）
卷期: Volume 17, issue 3  

页码: 165-180

 

ISSN:0038-7010

 

年代: 1984

 

DOI:10.1080/00387018408062676

 

出版商: Taylor & Francis Group

 

关键词: Raman Scattering from implanted silicon

 

数据来源: Taylor

 

摘要:

The surface of a P type Si wafer was bombarded with14N2+and H2+and the Raman spectrum of the implanted surface was obtained. The recorded spectrum not only confirms the information of various silicon-nitrogen, silicon-hydrogen, silicon-hydrogen-nitrogen-oxygen complexes but enables the identification of others.

 

点击下载:  PDF (399KB)



返 回