Oxide films have been deposited on InP by sputtering InP in an oxygen DC-excited plasma. The rate of sputtering was enhanced by applying a magnetic field. Preliminary microprobe and Auger analysis of the films has indicated equal proportions of indium and phosphorus with a good incorporation of oxygen and a moderately uniform composition. Measurements on MOS devices have shown a film resistivity of ̃3 × 1012σcm. The oxide film has been used in fabricatingn-channel inversion-type MOSFETs.