首页   按字顺浏览 期刊浏览 卷期浏览 Degradation of AlxGa1−xAs heterojunction electroluminescent devices
Degradation of AlxGa1−xAs heterojunction electroluminescent devices

 

作者: M. Ettenberg,   H. Kressel,   H. F. Lockwood,  

 

期刊: Applied Physics Letters  （AIP Available online 1974）
卷期: Volume 25, issue 1  

页码: 82-85

 

ISSN:0003-6951

 

年代: 1974

 

DOI:10.1063/1.1655290

 

出版商: AIP

 

数据来源: AIP

 

摘要:

Experimental results are presented correlating the operating life of (AlGa)As heterojunction diodes with recombination region doping and Al concentration. For a given doping level, the operating life is shown to increase with the addition of Al. The relationship between spontaneous emission degradation and lasing properties has also been studied.

 

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