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Variations in Electrical Properties of Silicon Films on Sapphire Using the MOS Hall Technique

 

作者: A. C. Ipri,  

 

期刊: Applied Physics Letters  (AIP Available online 1972)
卷期: Volume 20, issue 1  

页码: 1-2

 

ISSN:0003-6951

 

年代: 1972

 

DOI:10.1063/1.1653956

 

出版商: AIP

 

数据来源: AIP

 

摘要:

An experimental technique is described for determining the electrical properties of thin semiconducting films as a function of distance from the surface. The method is applied to silicon on sapphire films nominally 1 &mgr; thick and doped ``n'' type on the order of (2–6)×1016/cm3, and the variation in average mobility and carrier concentration with depth into the layer is determined.

 

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