Charge‐coupled devices with resistive material covering the oxide between adjacent gate electrodes are described. These devices were fabricated incorporating a continuous strip of deposited silicon with doped and undoped regions. Since the surface potential under the gap can be controlled using this structure, reliablep‐channel devices with nonoverlapping gate electrodes can be made which have all the advantages ofp‐channel silicon gate technology. Transfer efficiencies greater than 99.3% per transfer have been obtained at up to 1‐MHz bit rates for three‐phase experimental devices.