首页   按字顺浏览 期刊浏览 卷期浏览 GaAs charge‐coupled devices
GaAs charge‐coupled devices

 

作者: I. Deyhimy,   J. S. Harris,   R. C. Eden,   D. D. Edwall,   S. J. Anderson,   L. O. Bubulac,  

 

期刊: Applied Physics Letters  （AIP Available online 1978）
卷期: Volume 32, issue 6  

页码: 383-385

 

ISSN:0003-6951

 

年代: 1978

 

DOI:10.1063/1.90062

 

出版商: AIP

 

数据来源: AIP

 

摘要:

A Schottky‐barrier‐gate buried‐channel GaAs CCD has been successfully demonstrated. A 10‐cell (30 gates) three‐phase device was operated at room temperature. The device employs a natural channel stop formed by the transfer gates extending from ann‐type active region onto a semi‐insulating GaAs substrate.

 

点击下载:  PDF (210KB)



返 回