Effect of the Nonuniform dc Field on Carrier Waves in Negative‐Differential‐Mobility Semiconductors
作者:
M. Bini,
G. R. Bisio,
期刊:
Applied Physics Letters
(AIP Available online 1972)
卷期:
Volume 20,
issue 3
页码: 112-114
ISSN:0003-6951
年代: 1972
DOI:10.1063/1.1654069
出版商: AIP
数据来源: AIP
摘要:
The growth of a carrier wave propagating through a negative‐differential‐mobility semiconducting sample is discussed under nonuniform dc bias conditions. A simple analytical expression for the over‐all numerical gain is given in terms of current density and of the input and output carrier‐wave velocities only. Applications ton‐type GaAs are discussed.
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