Scanning Capacitance Microscopy (SCM) can be used to measure doping density in silicon with a spatial resolution of about 10 nm. In order to make such measurements on fabricated devices, the device must be cross-sectioned, and an oxide sufficient to form an MOS capacitor with the SCM probe tip must be grown on the cut face without affecting the device structure. Thus thermal oxidation under conditions usually employed to grow the gate oxide (≈900&hthinsp;°C) cannot be used. We have systematically investigated oxide growth on silicon under mild conditions. An oxide sufficient for SCM can be grown thermally on a clean, polished silicon surface at temperatures of 300&hthinsp;°C and above. In addition, such an oxide can be made near room temperature in the presence of ozone generated by intense ultraviolet light. SCM measurements using such an oxide show stable flatband voltages and breakdown voltages above 3 V. The oxide thickness, measured ellipsometrically, is(2.0±0.2)nm.©2001 American Institute of Physics.