Diffusion lengths in amphoteric GaAs heteroface solar cells
作者:
K. L. Ashley,
S. W. Beal,
期刊:
Applied Physics Letters
(AIP Available online 1978)
卷期:
Volume 32,
issue 6
页码: 375-376
ISSN:0003-6951
年代: 1978
DOI:10.1063/1.90051
出版商: AIP
数据来源: AIP
摘要:
Minority‐carrier diffusion lengths in amphoteric GaAs : Si were investigated. Electron and hole diffusion lengths inpandntype respectively were determined to beLn=13 &mgr;m andLp=7 &mgr;m. Preliminary efficiency measurements on heteroface structures based on amphoteric GaAs : Sip‐njunctions indicated that these devices should make excellent solar cells.
点击下载:
PDF
(144KB)
返 回