Bistable switching with memory has been achieved in variousn‐type GaAs Schottky contacts andn‐type Si Schottky contacts doped with trap impurities. Transition from the low‐conductivity state into a high‐conductivity state is established after a delay of 10 nsec, when a threshold voltage is exceeded. With opposite bias direction, resetting occurs in 10 nsec by exceeding a current threshold. Either state is maintained over weeks without bias.