Accelerated step‐temperature aging of AlxGa1−xAs heterojunction laser diodes
作者:
H. Kressel,
M. Ettenberg,
I. Ladany,
期刊:
Applied Physics Letters
(AIP Available online 1978)
卷期:
Volume 32,
issue 5
页码: 305-308
ISSN:0003-6951
年代: 1978
DOI:10.1063/1.90030
出版商: AIP
数据来源: AIP
摘要:
Double‐heterojunction Al0.3Ga0.7As/Al0.08Ga0.92As lasers (oxide‐striped and Al2O3facet coated) were subjected to step‐temperature aging from 60 to 100 °C. The change in threshold current and spontaneous output was monitored at 22 °C. The average time required for a 20% pulsed threshold current increases from about 500 h, when operating at 100 °C, to about 5000 h at 70 °C. At 22 °C, the extrapolated time is about 106h. The time needed for a 50% spontaneous emission reduction is of the same order of magnitude. The resulting ’’activation energies’’ are ∼0.95 eV for laser degradation and ∼1.1 eV for the spontaneous output decrease.
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