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Anisotropy of the differential conductivity and of the transverse diffusion coefficient inn‐type silicon

 

作者: D. Gasquet,   J. P. Nougier,  

 

期刊: Applied Physics Letters  （AIP Available online 1978）
卷期: Volume 33, issue 1  

页码: 89-91

 

ISSN:0003-6951

 

年代: 1978

 

DOI:10.1063/1.90157

 

出版商: AIP

 

数据来源: AIP

 

摘要:

Measurements of the transverse differential conductivity of hot carriers in semiconductors are performed, for the first time, using an experimental setup described in the present paper. This allows the determination of the transverse diffusion coefficients.

 

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