Modification of Schottky barriers in silicon by reactive ion etching with NF3
作者:
S. Ashok,
T. P. Chow,
B. J. Baliga,
期刊:
Applied Physics Letters
(AIP Available online 1983)
卷期:
Volume 42,
issue 8
页码: 687-689
ISSN:0003-6951
年代: 1983
DOI:10.1063/1.94073
出版商: AIP
数据来源: AIP
摘要:
Reactive ion etching of silicon with NF3gas has been found to alter the silicon surface such that the Schottky barrier height is systematically changed with ion energy. The energetic ions introduce a net positive surface charge which increases the barrier height on p‐Si and decreases it onn‐Si. The Schottky barrier modification is found to be a function of ion energy as well as gas plasma used.
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