Surface ripples in laser‐photochemical wet etching of gallium arsenide
作者:
Noriaki Tsukada,
Sumio Sugata,
Hiroshi Saitoh,
Yoh Mita,
期刊:
Applied Physics Letters
(AIP Available online 1983)
卷期:
Volume 43,
issue 2
页码: 189-191
ISSN:0003-6951
年代: 1983
DOI:10.1063/1.94276
出版商: AIP
数据来源: AIP
摘要:
Surface ripples of submicrometer spatial period are observed in laser enhanced etching with liquid etchants. The surface ripple formation in the laser‐photochemical wet etching is not explained by the surface polariton model which needs melting of the semiconductor surface. To explain this ripple formation, we have to consider other mechanisms for ripple formation which does not need melting of the semiconductor surface, such as Raman excitation of surface polariton, polarization charge model, and bulk‐selvedge coupling model. We suggest that this low power and high speed laser‐photochemical etching provides a valuable one‐step process for producing the fine diffraction gratings required by integrated optics.
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