Heavy negative ion production probabilities by Xe+sputtering on a cesiated sputtering surface were measured. The production probabilities were strongly affected by the cesiated surface condition which was determined by a flux of neutral cesium supply to the surface and a target surface temperature. The measured maximum production probabilities at the optimal condition were considerably high and were about 10% or more for Cu, C, Si, Ge, and W targets and about 1% for Ta and Mo targets.