Uniform Schottky barrier avalanche photodiodes with gains greater than 250, rise times less than 200 psec, and good quantum efficiencies at 1.06 &mgr;m have been fabricated in InxGa1−xAs alloys. The material used for these devices was grown epitaxially on GaAs substrates using an AsCl3&sngbnd;H2&sngbnd;Ga&sngbnd;In vapor‐phase system which permitted grading the epitaxial layers from GsAs to the desired composition.