ZnSe Electroluminescent Device Exhibiting Switching and Memory
作者:
A. W. Livingstone,
J. W. Allen,
期刊:
Applied Physics Letters
(AIP Available online 1972)
卷期:
Volume 20,
issue 6
页码: 207-208
ISSN:0003-6951
年代: 1972
DOI:10.1063/1.1654112
出版商: AIP
数据来源: AIP
摘要:
An MIS structure, in which the semiconductor is suitably doped ZnSe, exhibits switching and memory properties. The same structure also emits light in both forward and reverse bias with an emission wavelength characteristic of the impurities present. Although the operation of the device is not completely understood the switching can be attributed to a transfer of charge from deep impurities in the semiconductor to the insulating layer.
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