Modeling and Optimization of Traveling Wave Field Effect Transistors
作者:
C. Byl,
Y. Crosnier,
期刊:
Journal of Electromagnetic Waves and Applications
(Taylor Available online 1991)
卷期:
Volume 5,
issue 4-5
页码: 419-438
ISSN:0920-5071
年代: 1991
DOI:10.1163/156939391X00167
出版商: Taylor & Francis Group
数据来源: Taylor
摘要:
This paper provides new insight on traveling wave phenomena, along the transverse direction, in field effect transistors. Specially designed structures are proposed, either in single gate form or in dual gate form, which allow overcoming inherent limitations due to gate losses and realizing on-chip wideband amplifiers. Demonstration of these capabilities is done using testing and modeling procedures based on distributed equivalent circuits.
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