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Infrared excitation spectrum of thallium‐doped silicon

 

作者: Walter Scott,   J. L. Schmit,  

 

期刊: Applied Physics Letters  （AIP Available online 1978）
卷期: Volume 33, issue 4  

页码: 294-295

 

ISSN:0003-6951

 

年代: 1978

 

DOI:10.1063/1.90343

 

出版商: AIP

 

数据来源: AIP

 

摘要:

The excitation spectrum of thallium‐doped silicon has been measured in crystals doped to a level of 5×1016Tl/cm3. The spectrum is characteristic of an effective‐mass‐like acceptor with an optical ionization energy of 0.246 meV. The peak optical cross section was estimated to be 2.6×10−17cm2.

 

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