The experimental data presented here show that the generation of dislocations in Si along Si3N4edges is due to the cumulative effect of the Si3N4stress field near the nitride edge and to the point defects produced during thermal oxidation. Within our experimental range, the stress along the Si3N4edges alone is not sufficient to generate dislocations in silicon. We have determined a critical ratio of Si3N4thickness to SiO2thickness which does not lead to the generation of dislocations.