Circuit model of double-heterojunction laser below threshold
作者:
Rodney S.Tucker,
期刊:
IEE Proceedings I (Solid-State and Electron Devices)
(IET Available online 1981)
卷期:
Volume 128,
issue 3
页码: 101-106
年代: 1981
DOI:10.1049/ip-i-1.1981.0029
出版商: IEE
数据来源: IET
摘要:
A new circuit model of a stripe-geometry double-heterojunction injection laser below threshold is presented. The model is derived from the physics of the semiconductor heterojunction, and takes into account the effects of active-layer carrier degeneracy, high-level injection, and nonradiative recombination along the stripe edge. Turn-on delay characteristics and small-signal input resistance characteristics of a laser are computed using the circuit model. Results of these analyses are compared with previous theoretical results and published experimental data.
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