作者: H. Sonnenberg,
期刊: Applied Physics Letters (AIP Available online 1972) 卷期: Volume 21, issue 6
页码: 278-280
ISSN:0003-6951
年代: 1972
DOI:10.1063/1.1654377
出版商: AIP
数据来源: AIP
摘要:
The effect of thick Cs&sngbnd;O layers on photoemission from GaAs and InAs0.4P0.6cathodes is experimentally investigated. Simple empirical relationships between the yield and thickness and between the escape probability and thickness are given.
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