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Temperature dependence of the lasing transition in high‐purity GaAs

 

作者: S. R. Chinn,   J. A. Rossi,   C. M. Wolfe,  

 

期刊: Applied Physics Letters  （AIP Available online 1973）
卷期: Volume 23, issue 12  

页码: 699-701

 

ISSN:0003-6951

 

年代: 1973

 

DOI:10.1063/1.1654795

 

出版商: AIP

 

数据来源: AIP

 

摘要:

We have measured the lasing energy of optically pumped high‐purity GaAs from 2 to 300 K. Low‐temperature results show strong many‐body effects in the band‐to‐band lasing below the single‐particle band‐gap energy, and the high‐temperature data indicate that the lasing energy approaches the band gap measured by photoconductivity.

 

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