Properties of a high‐resistivity layer in epitaxially grown gallium arsenide film
作者:
H. Okamoto,
S. Sakata,
期刊:
Applied Physics Letters
(AIP Available online 1973)
卷期:
Volume 22,
issue 9
页码: 446-447
ISSN:0003-6951
年代: 1973
DOI:10.1063/1.1654706
出版商: AIP
数据来源: AIP
摘要:
In the high‐resistivity layer of vapor‐phase epitaxial GaAs films grown under the condition of relatively low arsenic vapor pressure, various interesting properties were found, such as (i) a large PTCR (positive temperature coefficient of resistivity), (ii) large photoconductivity, and (iii) current‐controlled negative resistance. A possible explanation is presented.
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