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Residual double acceptors in bulk GaAs

 

作者: K. R. Elliott,  

 

期刊: Applied Physics Letters  （AIP Available online 1983）
卷期: Volume 42, issue 3  

页码: 274-276

 

ISSN:0003-6951

 

年代: 1983

 

DOI:10.1063/1.93913

 

出版商: AIP

 

数据来源: AIP

 

摘要:

By using infrared absorption, photoluminescence, and Hall measurements we have observed an additional level associated with a residual acceptor in liquid encapsulated Czochralski GaAs. These results indicate that the defect is a double acceptor with levels 78 and 200 meV above the valence band.

 

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