A porous silicon (PS) layer can be produced on a crystalline silicon substrate by electrochemical or chemical etching in hydrofluoric acid (HF) solutions. There are many properties that make PS thin films interesting for photovoltaic applications, such as a possible direct band gap that can be adjusted between 1.5 and 1.9 eV, textured surfaces for light trapping, the potential for low cost and large‐area fabrication, and the possibility of tandem cell structures with Si. We report the fabrication of large area PS (up to 3‘diameter) with quite uniform photoluminescence (PL) properties, and studies of the effects of post‐hydrogenation treatments on the intensity and stability of the PL from PS. We have observed that a remote‐plasma processing treatment can increase the PL emission intensity from PS prepared under certain conditions by 100 times or more. The emission band is narrower and centered more toward the blue for the remote‐plasma processed sample, and the PL emission intensity does not degrade in an air ambient over a period of at least several weeks. This result indicates that PS has the potential to become a stable and useful optoelectronic material.