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Inversion layers at PbTe interfaces

 

作者: F. Cerrina,   R. R. Daniels,   V. Fano,  

 

期刊: Applied Physics Letters  （AIP Available online 1983）
卷期: Volume 43, issue 2  

页码: 182-184

 

ISSN:0003-6951

 

年代: 1983

 

DOI:10.1063/1.94273

 

出版商: AIP

 

数据来源: AIP

 

摘要:

Synchrotron‐radiation photoemission experiments directly demonstrate that the creation of an inversion layer is a common feature of the PbTe‐Al, PbTe‐In, and PbTe‐Ge interface formation processes. This phenomenon is interpreted in terms of the experimentally observed adatom‐Pb exchange reactions.

 

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