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Electric field enhancement of escape probability on negative‐electron‐affinity surfaces

 

作者: J. R. Howorth,   A. L. Harmer,   E. W. L. Trawny,   R. Holtom,   C. J. R. Sheppard,  

 

期刊: Applied Physics Letters  （AIP Available online 1973）
卷期: Volume 23, issue 3  

页码: 123-124

 

ISSN:0003-6951

 

年代: 1973

 

DOI:10.1063/1.1654828

 

出版商: AIP

 

数据来源: AIP

 

摘要:

Electric field enhancement of photoemission from negative‐electron‐affinity surfaces on silicon and GaAs has been studied. It is shown that the electric field increases the escape probability and does not change the spectral response of negative‐electron‐affinity surfaces. The results are explained by assuming a simple surface potential barrier together with work function lowering by the Schottky effect.

 

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