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TRANSIENT HIGH‐DENSITY INJECTION IN A SEMICONDUCTOR WITH TRAPS

 

作者: Betsy Ancker‐Johnson,   William P. Robbins,   David B. Chang,  

 

期刊: Applied Physics Letters  （AIP Available online 1970）
卷期: Volume 16, issue 10  

页码: 377-380

 

ISSN:0003-6951

 

年代: 1970

 

DOI:10.1063/1.1653032

 

出版商: AIP

 

数据来源: AIP

 

摘要:

The properties of high‐density injection intop‐InSb at 77 °K are compared with theory. An extension of Dean's theory is in satisfactory agreement with the extensive observations which include density‐dependent growth times.

 

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