Above-threshold analysis of channelled-substrate-planar (CSP) laser
作者:
K.A.Shore,
期刊:
IEE Proceedings I (Solid-State and Electron Devices)
(IET Available online 1981)
卷期:
Volume 128,
issue 1
页码: 9-15
年代: 1981
DOI:10.1049/ip-i-1.1981.0003
出版商: IEE
数据来源: IET
摘要:
The first self-consistent description of the above-threshold behaviour of the CSP laser is presented. The analysis incorporates the relationship between the optical field and the lateral variation of the electron concentration in the active region. The influence of current spreading on the gain profile is included in the formalism. Operating characteristics of the device such as near and far-field patterns and light/current curves are found. Devices of differing cross-sectional dimensions are examined.
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