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IntegrateddE‐Edetector system made by ion implantation

 

作者: A. Kostka,   S. Kalbitzer,  

 

期刊: Applied Physics Letters  （AIP Available online 1973）
卷期: Volume 23, issue 12  

页码: 704-705

 

ISSN:0003-6951

 

年代: 1973

 

DOI:10.1063/1.1654797

 

出版商: AIP

 

数据来源: AIP

 

摘要:

Boron and phosphorus ions of 8‐MeV and 6‐keV energy, respectively, have been implanted into silicon single crystals to form an+‐n‐p+‐n‐n+structure. Tests of this duodiode nuclear detector system with 5.5‐MeV &agr; particles yielded resolutions of about 100 keV (FWHM).

 

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