A unified explanation for secondary ion yields
作者:
V. R. Deline,
C. A. Evans,
Peter Williams,
期刊:
Applied Physics Letters
(AIP Available online 1978)
卷期:
Volume 33,
issue 7
页码: 578-580
ISSN:0003-6951
年代: 1978
DOI:10.1063/1.90466
出版商: AIP
数据来源: AIP
摘要:
The pure element secondary ion yields under oxygen and cesium ion bombardment are shown to be solely dependent on a) the ionization potential (or electron affinity for negative ionization) of the sputtered atom and b) the reciprocal of the matrix sputtering yield which determines the equilibrium concentration of implanted oxygen or cesium. This unified approach accounts for the yields of C±, Si±, Ge±and Sn±from the pure elements as well as of Ga±and As±from gallium arsenide.
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