The temperature dependence of lattice disorder created in Si by 40‐keV Sb ions was studied by energy analysis of the yield of backscattered 1‐MeV He ions incident along ⟨111⟩ and ⟨110⟩ axes. Doses of ∼ 1 × 1013Sb ions/cm2were used so that the disorder level was below that representing an amorphous layer. The disorder per incident ion decreases strongly with implant temperature above 50°C. This is approximately 100°C lower than the region of corresponding decrease in the anneal of a low‐dose room‐temperature implantation. For implantation temperatures less than 50°C, the disorder per ion was only mildly temperature‐dependent.