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Temperature dependence of silicon Raman lines

 

作者: Raphael Tsu,   Jesus Gonzalez Hernandez,  

 

期刊: Applied Physics Letters  (AIP Available online 1982)
卷期: Volume 41, issue 11  

页码: 1016-1018

 

ISSN:0003-6951

 

年代: 1982

 

DOI:10.1063/1.93394

 

出版商: AIP

 

数据来源: AIP

 

摘要:

The one‐phonon and two‐phonon Raman spectra have been measured in the temperature range 20–900 °C. The rate of decrease of the normalized frequencies with increase of temperature for the zone center, TO atLand TA atX, is 5.4×10−5/°C, while for TO atXand TA atLis lower, being 3.6×10−5/°C. We have also found that the relative intensity of Stokes and anti‐Stokes components of the &Ggr;‐point optical phonon deviates significantly from the value involving only the phonon occupation number, particularly at high temperatures. The decrease of the &Ggr;25′phonon from 521 cm−1at 20 °C to 493 cm−1at 900 °C should provide an unambiguous determination of the surface temperature due to laser heating.

 

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