Gunn effect threshold and domain formation in transverse magnetic fields in indium antimonide
作者:
H. Heinrich,
W. Keeler,
期刊:
Applied Physics Letters
(AIP Available online 1972)
卷期:
Volume 21,
issue 4
页码: 171-172
ISSN:0003-6951
年代: 1972
DOI:10.1063/1.1654330
出版商: AIP
数据来源: AIP
摘要:
The potential has been probed onn‐type InSb bar samples at nanosecond time scales, both with and without an applied magnetic field. In a transverse magnetic field, nucleation of a traveling domain occurs at the side of the cathode where the electric field is high due to Hall field shorting. The results explain the strong reduction of Gunn effect threshold in a magnetic field.
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