Transient analysis of schottky-barrier diodes
作者:
A.McCowen,
S.B.H.Shaari,
K.Board,
期刊:
IEE Proceedings I (Solid-State and Electron Devices)
(IET Available online 1988)
卷期:
Volume 135,
issue 3
页码: 71-75
年代: 1988
DOI:10.1049/ip-i-1.1988.0013
出版商: IEE
数据来源: IET
摘要:
The turnon and turnoff transients of Schottky-barrier diode are determined by analysis based on thermionic emission across the metal-semiconductor barrier and a displacement current within the space charge region. The results of the analysis are compared to those from device simulator and are shown to be in excellent agreement. 10%; time constants for both turnon and turnoff transients are shown to be strongly controlled by the SBDs depletion capacitance reverse bias.
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