Laser‐beam annealing of heavily damaged implanted layers on silicon
作者:
J. C. Muller,
A. Grob,
J. J. Grob,
R. Stuck,
P. Siffert,
期刊:
Applied Physics Letters
(AIP Available online 1978)
卷期:
Volume 33,
issue 4
页码: 287-289
ISSN:0003-6951
年代: 1978
DOI:10.1063/1.90367
出版商: AIP
数据来源: AIP
摘要:
The behavior during annealing of heavily doped silicon layers obtained by a high‐current‐density ion implantation, realized by discharge in BF3atmosphere, is investigated. The annealing is performed by a laser pulse and the surface layers are studied by Rutherford backscattering, SIMS, and conductivity measurements. Comparisons with thermal annealing show the advantage of using laser pulses to restore the original crystallinity.
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