It is shown that the time‐dependent capacitance change associated trap refilling in a Schottky diode is nonexponential, consisting in the sum of two contributions which reduce to a single one for reverse biases smaller thanVSCO, the space‐charge crossover voltage. Determination ofVSCOyields both the trap depth &Dgr;Eand its capture cross section. This is experimentally demonstrated for the oxygen‐related trap inn‐GaAs. We find &Dgr;E=0.67 eV in good agreement with other determinations.