Photoluminescence of GaAs‐AlxGa1−xAs multiple quantum well structure under high excitations
作者:
Z. Y. Xu,
V. G. Kreismanis,
C. L. Tang,
期刊:
Applied Physics Letters
(AIP Available online 1983)
卷期:
Volume 43,
issue 5
页码: 415-417
ISSN:0003-6951
年代: 1983
DOI:10.1063/1.94372
出版商: AIP
数据来源: AIP
摘要:
Allowed transitions between then=1, 2, and 3 subbands of the conduction and valence bands of a multiple quantum well heterostructure of GaAs‐Al0.6Ga0.4As are seen in spontaneous emission under high excitations. The observed peaks agree very well with the calculated locations of the peaks when the finite depth of the potential well and the nonparabolicity of the conduction band are taken into account. The same basic features are seen under cw or picosecond pulse excitation and at room temperature, 77 K, or 4.2 K.
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