Reduction of radiation induced soft error rates in devices utilizing localized state charge storage
作者:
D. D. Coon,
G. E. Derkits,
P. F. Shepard,
期刊:
Applied Physics Letters
(AIP Available online 1982)
卷期:
Volume 40,
issue 1
页码: 75-77
ISSN:0003-6951
年代: 1982
DOI:10.1063/1.92894
出版商: AIP
数据来源: AIP
摘要:
It is shown that for semiconductor memory devices utilizing charge storage in localized states it is possible to achieve a high degree of immunity to soft errors. This is accomplished by the application of an electric field which is strong enough to efficiently remove carriers produced by radiation from the region where charge is stored in localized states but not so strong as to remove readily by field ionization charge already stored in localized states. Tests of this concept have been performed using energetic Compton electrons produced by gamma rays.
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