Boron atom distributions in ion‐implanted silicon by the (n,4He) nuclear reaction
作者:
J.F. Ziegler,
B.L. Crowder,
G.W. Cole,
J.E.E. Baglin,
B.J. Masters,
期刊:
Applied Physics Letters
(AIP Available online 1972)
卷期:
Volume 21,
issue 1
页码: 16-17
ISSN:0003-6951
年代: 1972
DOI:10.1063/1.1654197
出版商: AIP
数据来源: AIP
摘要:
The concentration distribution of10B atoms ion‐implanted into silicon has been determined with a new nuclear reaction technique, The concentration profiles for implantations in the energy range 40–500 keV were determined before and after annealing at 900 °C for 30 min and show that enhanced diffusion, because of radiation damage, is of minor importance. The profile ranges and widths have been compared to LSS theory and to other experiments.
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